2SK1910 silicon n-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc - dc converter avalanche ratings outline 1 2 3
to-220ab 1. gate
2. drain
(flange)
3. source d g s
2SK1910 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 25 a drain peak current i d(pulse) * 1 100 a body to drain diode reverse drain current i dr 25 a avalanche current i ap * 3 25 a avalanche energy e ar * 3 53 mj channel dissipation pch* 2 50 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w
2SK1910 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltage drain current i dss 250 m av ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.25 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.03 0.04 w i d = 15 a v gs = 10 v* 1 0.043 0.06 w i d = 15 a v gs = 4 v* 1 forward transfer admittance |y fs | 1221s i d = 15 a v ds = 10 v* 1 input capacitance ciss 1450 pf v ds = 10 v v gs = 0 f = 1 mhz output capacitance coss 655 pf reverse transfer capacitance crss 195 pf turn-on delay time t d(on) 20nsi d = 15 a v gs = 10 v r l = 2 w rise time t r 110 ns turn-off delay time t d(off) 225 ns fall time t f 145 ns body to drain diode forward voltage v df 1.2 v i f = 25 a, v gs = 0 body to drain diode reverse recovery time t rr 100 ns i f = 25 a, v gs = 0, dif / dt = 50 a / m s note 1. pulse test
2SK1910 4 power vs. temperature derating 60
40
20
0 50 100 150 case temperature tc (?) channel dissipation pch (w) maximum safe operation area drain to source voltage v (v) 0.1 0.3 1 10 ds 500 drain current i (a) d operation in this area
is limited by r (on) ds ta = 25? 300 3 30 100 10 s m 100 s m dc operation (tc = 25?) 100 30 10 3 1 0.5 1 ms pw = 10 ms (1 shot) typical output characteristics drain to source voltage v (v) ds 0246810 10 20 30 40 50 drain current i (a) d v = 2.5 v gs 5 v 10 v pulse test 6 v 4 v 3.5 v 3 v typical transfer characteristics 12345 gate to source voltage v (v) gs 10 20 30 40 50 drain current i (a) d pulse test
v = 10 v
ds 25? tc = ?5? 0 75?
2SK1910 5 drain to source saturation voltage
vs. gate to source voltage 246810 0 gate to source voltage v (v) gs drain to source saturation voltage
v (on) (v) ds i = 20 a d 10 a 0.4 0.8 1.2 1.6 2.0 5 a pulse test static drain to source on state
resistance vs. drain current 2 drain current i (a) d 0.5 static drain to source on state
resistance r (on) ( ) ds w pulse test v = 4 v 0.2 0.1 0.05 0.01 0.02 0.005 5 10 20 50 100 200 gs 10 v static drain to source on state
resistance vs. temperature ?0 0 40 80 120 case temperature t (?) 0 0.2 0.4 0.6 0.8 1.0 static drain to source on state
resistance r (on) ( ) ds w pulse test i = 20 a d 5 a, 10 a 20 a v = 4 v gs 10 v c 160 5 a, 10 a forward transfer admittance
vs. drain current 0.5 2 10 drain current i (a) d 100 forward transfer admittance
|yfs| (s) v = 10 v
pulse test ds tc = ?5? 75? 25? 50 20 10 5 2 1 1 5 20 50
2SK1910 6 body to drain diode reverse
recovery time 0.5 2 10 50 10 200 1000 reverse drain current i (a) dr reverse recovery time t (ns) di/dt = 50 a/ s, v = 0
ta = 25? m gs rr 500 100 50 20 1 5 20 typical capacitance vs.
drain to source voltage 1000 100 10 0 drain to source voltage v (v) ds capacitance c (pf) ciss coss crss v = 0
f = 1 mhz gs 10000 10 20 30 40 50 dynamic input characteristics 20 40 60 80 100 gate charge qg (nc) 20 40 80 100 drain to source voltage v (v) ds i = 25 a
d v = 50 v
25 v
10 v dd v = 50 v
25 v
10 v dd 4 8 12 16 20 gate to source voltage v (v) gs 0 0 60 v gs v ds switching characteristics 0.5 1000 drain current i (a) d switching time t (ns) t (off) t (on) t 500 200 100 50 20 10 12 5102050 v = 10 v, v = 30 v
pw = 2 s, duty 1% gs m dd f : d t r d <
=
2SK1910 7 reverse drain current vs.
source to drain voltage source to drain voltage v (v) sd reverse drain current i (a) dr 10 20 30 40 50 5 v 0 v = 10 v gs 0, ? v 0.4 0.8 1.2 1.6 2.0
pulse test maximum avalanche energy vs.
channel temperature derating channel temperature tch (?) repetive avalanche energy e (mj) ar i = 25 a
v = 25 v
duty < 1%
rg 50 ap dd w >
= 25 50 75 100 125 150 20 40 0 60 80 100 v
monitor ds i
monitor ap d.u.t v dd rg 50 w vin
15 v v dd i d i ap v (br) dss v ds e = ??i ar ap 1
2 2 v
v ?v dss dss dd avalanche test circuit and waveform l 0
2SK1910 8 3 pulse width pw (s) normalized transient thermal impedance g s (t) 1.0 0.1 0.3 10 m 0.03 0.01 100 m 10 m 100 m 1 10
1 m normalized transient thermal impedance vs. pulse width pw p dm d = t pw q ch? (t) = g s (t) ? q ch?
q ch? = 2.50?/w, t c = 25? t t c = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse switching time test circuit vin monitor vout monitor r l v dd
30 v d.u.t 50 w vin
10 v = . . vout waveforms t d (on) 10% 10% 90% 90% 10% 90% vin t r t d (off) t f
2SK1910 9 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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